symbol v ds v gs i dm t j , t stg symbol ty p max 73 90 96 125 r jl 63 75 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 8 gate-source voltage drain-source voltage -20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v -3.7 -30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.4 0.9 -55 to 150 t a =70c i d -4.7 AO8801 features v ds (v) = -20v i d = -4.7 a (v gs = -4.5v) r ds(on) < 42m ? (v gs = -4.5v) r ds(on) < 53m ? (v gs = -2.5v) r ds(on) < 70m ? (v gs = -1.8v) esd rating: 3000v hbm the AO8801 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. it is esd protected. standard product AO8801 is pb- free (meets rohs & sony 259 specifications). d s1 g1 d2 s2 g2 g1 s1 s1 d1 g2 s2 s2 1 2 3 4 8 7 6 5 tssop-8 top view d2 dual p-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss -20 v -1 t j =55c -5 1 a 10 a v gs(th) -0.3 -0.55 -1 i d(on) -25 a 35 42 t j =125c 47 57 44 53 m ? 54 70 m ? g fs 816 s v sd -0.78 -1 v i s -2.2 a c iss 1450 pf c oss 205 pf c rss 160 pf r g 6.5 ? q g 17.2 nc q gs 1.3 nc q gd 4.5 nc t d(on) 9.5 ns t r 17 ns t d(off) 94 ns t f 35 ns t rr 31 ns q rr 13.8 nc gate-body leakage current gate resistance v gs =0v, v ds =0v, f=1mhz r ds(on) static drain-source on-resistance forward transconductance diode forward voltage turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delay time dynamic parameters i f =-4a, di/dt=100a/ s v gs =0v, v ds =-10v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-4a gate source charge gate drain charge turn-on rise time turn-off delay time v gs =-4.5v, v ds =-10v, r l =2.5 ? , r gen =3 ? m ? v gs =-2.5v, i d =-4a i s =-1a,v gs =0v v ds =-5v, i d =-4.7a i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-16v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current v ds =0v, v gs =4.5v i gss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-4a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-1.8v, i d =-2a v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-4.7a reverse transfer capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <30 0 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. AO8801 dual p-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 0 5 10 15 20 25 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.5v -2.0v -2.5v -4.5v -8v -3.0v 0 2 4 6 8 10 0 0.5 1 1.5 2 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 40 60 80 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =-4.7a, v gs =-2.5v i d =-2a, v gs =-1.8v i d =-4.7a, v gs =-4.5v 20 30 40 50 60 70 80 90 100 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-4.7a 25c 125c 25c 125c v ds =-5v v gs =-1.8v v gs =-2.5v v gs =-4.5v AO8801 dual p-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 400 800 1200 1600 2000 2400 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance single pulse d=t on /(t on +t) t j,pk =t a +p dm .z ja .r ja r ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 s v ds =-10v i d =-4.7a t j(max) =150c t a =25c AO8801 dual p-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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